0204-125
RF TRANS NPN 60V 400MHZ 55JTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's 0204-125 is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 225MHz to 400MHz, delivering a typical gain of 7dB to 8.5dB. It features a maximum collector current of 16A and a collector-emitter breakdown voltage of 60V, with a maximum power dissipation of 270W. The 0204-125 is housed in a 55JT chassis mount package, suitable for demanding thermal environments with an operating junction temperature of 200°C. Its robust construction and performance characteristics make it suitable for use in broadcast, industrial, and military communication systems. The DC current gain (hFE) is a minimum of 20 at 1A, 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55JT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB ~ 8.5dB |
| Power - Max | 270W |
| Current - Collector (Ic) (Max) | 16A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Frequency - Transition | 225MHz ~ 400MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55JT |
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