0105-50
RF TRANS NPN 65V 500MHZ 55JTManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation 0105-50 is an NPN bipolar RF transistor designed for high-power applications. This robust component operates within a frequency range of 100MHz to 500MHz, supporting a collector current of up to 7A and a maximum collector-emitter breakdown voltage of 65V. It delivers a power output of 140W, with a typical gain of 8.5dB to 10dB. The minimum DC current gain (hFE) is 10 at 1A and 5V. Featuring a chassis mount design and a 55JT package, the 0105-50 is engineered for demanding thermal environments, with an operating junction temperature of 200°C. This device is commonly employed in power amplification stages within industrial, defense, and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 55JT |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.5dB ~ 10dB |
| Power - Max | 140W |
| Current - Collector (Ic) (Max) | 7A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 100MHz ~ 500MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 55JT |
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