NAND512W3A2DN6E
IC FLASH 512MBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND512W3A2DN6E is a 512Mbit non-volatile FLASH memory component featuring a parallel interface. Designed for robust operation, this device offers an access time of 50 ns and a page write cycle time of 50 ns. The memory organization is 64M x 8, utilizing advanced NAND technology. It operates within a voltage range of 2.7V to 3.6V and is specified for an ambient temperature range of -40°C to 85°C. The component is housed in a 48-TSOP package, suitable for surface mount applications. This memory solution is commonly employed in industrial automation, consumer electronics, and automotive systems requiring reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 50ns |
| Memory Interface | Parallel |
| Access Time | 50 ns |
| Memory Organization | 64M x 8 |
| Programmable | Verified |