Home

Products

Integrated Circuits (ICs)

Memory

Memory

NAND512R3A2SN6E

Banner
productimage

NAND512R3A2SN6E

IC FLASH 512MBIT PAR 48TSOP I

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. NAND512R3A2SN6E is a 512Mbit non-volatile NAND flash memory IC with a parallel interface. This component offers a 50 ns access time and a page write cycle time of 50 ns. The memory organization is 64M x 8, utilizing advanced FLASH - NAND technology. It operates within a supply voltage range of 1.7V to 1.95V and is rated for an operating temperature of -40°C to 85°C. The device is housed in a 48-TSOP I package, suitable for surface mount applications. This memory solution is commonly found in industrial, consumer electronics, and automotive applications requiring reliable data storage.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / Case48-TFSOP (0.724"", 18.40mm Width)
Mounting TypeSurface Mount
Memory Size512Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package48-TSOP I
Write Cycle Time - Word, Page50ns
Memory InterfaceParallel
Access Time50 ns
Memory Organization64M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT54W2MH8JF-4

IC SRAM 18MBIT HSTL 165FBGA

product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
EDF8164A3PF-JD-F-R TR

IC DRAM 8GBIT PARALLEL 933MHZ