NAND128W3A0BN6E
IC FLASH 128MBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND128W3A0BN6E is a 128Mbit NAND Flash memory integrated circuit. This non-volatile memory component features a parallel interface with an access time of 50 ns and a word/page write cycle time of 50 ns. The memory organization is 16M x 8. This device operates with a supply voltage range of 2.7V to 3.6V and is designed for surface mounting within a 48-TSOP package. The operating temperature range is specified as -40°C to 85°C (TA). This component finds application in various industrial sectors including consumer electronics, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 50ns |
| Memory Interface | Parallel |
| Access Time | 50 ns |
| Memory Organization | 16M x 8 |
| Programmable | Not Verified |
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