NAND08GW3F2AN6E
IC FLASH 8GBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND08GW3F2AN6E is an 8 Gigabit (Gbit) non-volatile NAND Flash memory device with a parallel interface. This component features a page read access time of 25 ns and a page write cycle time of 25 ns. The memory organization is 1G x 8, utilizing advanced FLASH NAND technology. It is supplied in a 48-TSOP package suitable for surface mount applications. Operating across a temperature range of -40°C to 85°C (TA), the NAND08GW3F2AN6E operates from a supply voltage of 2.7V to 3.6V. This memory solution is widely adopted in consumer electronics, industrial applications, and automotive systems requiring high-density, reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 1G x 8 |
| Programmable | Not Verified |
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