NAND04GW3C2BN6E
IC FLASH 4GBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND04GW3C2BN6E is a 4Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory component offers an access time of 25 ns and a page write cycle time of 25 ns. The memory is organized as 512M x 8. The device operates from a supply voltage range of 2.7V to 3.6V and is housed in a 48-TSOP package suitable for surface mounting. Its operating temperature range is -40°C to 85°C. This component is utilized in various applications requiring high-density data storage, including consumer electronics and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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