NAND04GW3B2DN6E
IC FLASH 4GBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND04GW3B2DN6E is a 4Gbit NAND Flash memory device. This non-volatile memory utilizes a parallel interface and is organized as 512M x 8. Featuring a typical access time of 25 ns, this component is suitable for applications requiring high-speed data access. The NAND04GW3B2DN6E operates within a voltage range of 2.7V to 3.6V and supports a wide industrial operating temperature range of -40°C to 85°C. The device is provided in a 48-TSOP package. This memory solution is commonly found in consumer electronics, industrial control systems, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| Programmable | Verified |
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