NAND02GR3B2DN6E
IC FLASH 2GBIT PARALLEL 48TSOPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND02GR3B2DN6E is a 2Gbit, non-volatile, parallel NAND Flash memory component. This device features a 256M x 8 memory organization and an access time of 45 ns. The NAND02GR3B2DN6E operates with a supply voltage range of 1.7V to 1.95V and has a write cycle time of 45ns for word/page operations. It is packaged in a 48-TSOP (Thin Small Outline Package) with a surface mount type. This component is suitable for applications in consumer electronics and industrial systems. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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