NAND01GW3B2CZA6E
IC FLASH 1GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND01GW3B2CZA6E is a 1Gbit non-volatile NAND Flash memory device featuring a parallel interface. This component offers a quick 25 ns access time for data retrieval and a 25 ns write cycle time per word/page. The memory organization is 128M x 8 bits. Designed for surface mount applications, it is housed in a compact 63-VFBGA (9.5x12) package. Operating within a voltage range of 2.7V to 3.6V, this NAND Flash memory is suitable for demanding applications across various industries including consumer electronics, automotive, and industrial systems. It operates reliably across an extended temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9.5x12) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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