NAND01GW3B2BZA6E
IC FLASH 1GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND01GW3B2BZA6E is a 1Gbit Non-Volatile Parallel FLASH memory device. This component utilizes NAND technology and is organized as 128M x 8. It features a fast 30 ns access time and a 30 ns write cycle time per page. The device operates within a voltage range of 2.7V to 3.6V and is specified for an operating temperature range of -40°C to 85°C. The NAND01GW3B2BZA6E is supplied in a 63-VFBGA (9x11) package, suitable for surface mount applications. This memory solution is commonly employed in embedded systems, consumer electronics, and industrial applications requiring high-density, reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9x11) |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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