NAND01GR3B2BZA6E
IC FLASH 1GBIT PARALLEL 63VFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. NAND01GR3B2BZA6E is a 1Gbit non-volatile NAND flash memory component featuring a parallel interface. This device offers an access time of 30 ns and a word/page write cycle time of 30 ns. The memory organization is 128M x 8, utilizing FLASH technology. It operates within a voltage range of 1.7V to 1.95V and is packaged in a 63-VFBGA (9x11) for surface mounting. The operating temperature range is -40°C to 85°C (TA). This component is suitable for applications in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (9x11) |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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