MT58V1MV18DT-6
IC SRAM 18MBIT PARALLEL 100TQFPManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT58V1MV18DT-6, a high-performance SYNCBURST™ SRAM device. This 18Mbit parallel memory offers a substantial 1M x 18 organization, operating at a clock frequency of 166 MHz with a rapid 3.5 ns access time. It features a voltage supply range of 2.375V to 2.625V and is housed in a compact 100-TQFP package (14x20.1 mm). The MT58V1MV18DT-6 is designed for demanding applications requiring fast data access and efficient operation. Its robust specifications make it suitable for use in telecommunications, networking equipment, and high-speed computing systems. The component operates within a temperature range of 0°C to 70°C.
Additional Information
Series: SYNCBURST™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 100-LQFP |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.375V ~ 2.625V |
| Technology | SRAM - Standard |
| Clock Frequency | 166 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 100-TQFP (14x20.1) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 1M x 18 |
| Programmable | Not Verified |
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