Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT57V512H36EF-5

Banner
productimage

MT57V512H36EF-5

IC SRAM 18MBIT PARALLEL 165FBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT57V512H36EF-5 is a high-speed synchronous SRAM memory component. This 18Mbit device features a parallel interface and operates at a clock frequency of 200 MHz with an access time of 2.4 ns. Its memory organization is 512K x 36 bits, providing ample capacity for demanding applications. The component utilizes a 165-FBGA (13x15) package, suitable for surface mount assembly. Operating within a supply voltage range of 2.4V to 2.6V and an ambient temperature range of 0°C to 70°C, this SRAM is designed for use in sectors such as telecommunications, networking, and high-performance computing.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case165-TBGA
Mounting TypeSurface Mount
Memory Size18Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.4V ~ 2.6V
TechnologySRAM - Synchronous
Clock Frequency200 MHz
Memory FormatSRAM
Supplier Device Package165-FBGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time2.4 ns
Memory Organization512K x 36
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA