MT54W2MH8BF-6
IC SRAM 18MBIT HSTL 165FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT54W2MH8BF-6, an 18Mbit synchronous SRAM from the QDR® series. This high-performance memory component features an HSTL interface, operating at a clock frequency of 167 MHz with an access time of 500 ps. The memory organization is 2M x 8, providing a total capacity of 18Mbit. It is supplied in a 165-FBGA (13x15) package suitable for surface mounting. Operating within a voltage range of 1.7V to 1.9V, this volatile memory is designed for demanding applications in sectors such as networking, telecommunications, and high-speed computing where rapid data access is critical. The 165-TBGA package ensures robust integration into advanced electronic systems.
Additional Information
Series: QDR®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 165-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous |
| Clock Frequency | 167 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | HSTL |
| Access Time | 500 ps |
| Memory Organization | 2M x 8 |
| Programmable | Not Verified |
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