MT54V512H18EF-6
IC SRAM 9MBIT HSTL 165FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT54V512H18EF-6, a high-performance 9-Mbit Quad Data Rate (QDR™) SRAM. This synchronous memory component features an HSTL interface and operates at a clock frequency of 167 MHz with an access time of 2.5 ns. The memory organization is 512K x 18 bits, providing a total capacity of 9 Mbit. Designed for surface mounting, it is housed in a compact 165-FBGA (13x15) package. The MT54V512H18EF-6 operates within a voltage range of 2.4V to 2.6V and is suitable for applications requiring high-speed data buffering and storage, commonly found in networking infrastructure, telecommunications equipment, and high-performance computing systems. The operating temperature range is 0°C to 70°C.
Additional Information
Series: QDR™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 165-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Quad Port, Synchronous |
| Clock Frequency | 167 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | HSTL |
| Access Time | 2.5 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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