MT54V512H18EF-10
IC SRAM 9MBIT PAR 165FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. introduces the MT54V512H18EF-10, a 9Mbit Quad Port Synchronous SRAM. This component offers a 512K x 18 memory organization, operating at a 100 MHz clock frequency. The parallel memory interface and 2.4V to 2.6V supply voltage make it suitable for high-performance applications. Packaged in a 165-FBGA (13x15) surface mount configuration, this volatile memory solution is designed for demanding environments. Its synchronous operation and quad-port architecture facilitate complex data handling. This memory component finds utility in sectors such as networking infrastructure and high-speed computing systems.
Additional Information
Series: QDR™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 165-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Quad Port, Synchronous |
| Clock Frequency | 100 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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