MT54V512H18AF-7.5
IC SRAM 9MBIT HSTL 165FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT54V512H18AF-7-5, a high-performance synchronous SRAM component from the QDR™ series. This 9Mbit memory offers a 512K x 18 organization, utilizing an HSTL interface for efficient data transfer. Operating at a clock frequency of 133 MHz with an access time of 3 ns, it is designed for demanding applications requiring rapid data retrieval. The component is housed in a compact 165-FBGA (13x15) package, suitable for surface mount assembly and operating within a temperature range of -20°C to 110°C. Its 2.4V to 2.6V supply voltage makes it compatible with various system architectures. This memory solution is well-suited for use in networking, telecommunications, and high-speed computing systems.
Additional Information
Series: QDR™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 165-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | -20°C ~ 110°C (TJ) |
| Voltage - Supply | 2.4V ~ 2.6V |
| Technology | SRAM - Synchronous |
| Clock Frequency | 133 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | HSTL |
| Access Time | 3 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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