MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT53E768M32D4DE-046-AAT-E is a 24Gbit LPDDR4X SDRAM memory component. This high-density memory features a 768M x 32 organization and operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. The memory interface utilizes LVSTL signaling, and the component requires a supply voltage between 1.06V and 1.17V. The write cycle time for a word/page is 18ns. Housed in a 200-TFBGA (10x14.5) package, this surface-mount device is designed for demanding applications. It is qualified to AEC-Q100 standards and operates across an extended temperature range of -40°C to 105°C (TC), making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 24Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL |
| Access Time | 3.5 ns |
| Memory Organization | 768M x 32 |
| Qualification | AEC-Q100 |
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