MT53E512M32D1ZW-046BAUT:B TR
IC DRAM 16GBIT 2.133GHZ 200WFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT53E512M32D1ZW-046BAUT-B-TR is a 16 Gbit LPDDR4X SDRAM device featuring a parallel interface. With a clock frequency of 2.133 GHz and an access time of 3.5 ns, this component offers high-speed data transfer capabilities. The memory organization is 512M x 32, providing substantial capacity for demanding applications. Designed for high-reliability environments, this device operates within an automotive temperature range of -40°C to 125°C and is AEC-Q100 qualified. It is supplied in a 200-TFBGA package with dimensions of 10x14.5 mm, suitable for surface mounting, and comes on a tape and reel. The operating voltage supply range is 1.06V to 1.17V. This memory solution is utilized in automotive electronics and other high-performance systems requiring advanced memory technology.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 32 |
| Qualification | AEC-Q100 |
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