MT53E512M32D1ZW-046BAIT:B
IC DRAM 16GBIT 2.133GHZ 200WFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT53E512M32D1ZW-046BAIT-B is a 16Gbit Mobile LPDDR4X SDRAM memory component. This high-performance device features a 2.133 GHz clock frequency and a 3.5 ns access time, organized as 512M x 32. The 200-TFBGA (10x14.5 mm) package facilitates surface mounting. Operating within a temperature range of -40°C to 95°C (TC) and a supply voltage of 1.06V to 1.17V, this AEC-Q100 qualified component is suitable for demanding applications. Its parallel interface and 18ns write cycle time are optimized for efficient data transfer. This memory IC finds application in automotive systems and other high-speed data processing environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 32 |
| Qualification | AEC-Q100 |
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