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MT53E512M32D1ZW-046BAAT:B TR

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MT53E512M32D1ZW-046BAAT:B TR

IC DRAM 16GBIT 2.133GHZ 200WFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT53E512M32D1ZW-046BAAT-B-TR is a 16Gbit Mobile LPDDR4X SDRAM device with a parallel interface. This volatile memory component operates at a clock frequency of 2.133 GHz, offering an access time of 3.5 ns. The memory organization is 512M x 32. It is supplied in a 200-TFBGA package with dimensions of 10x14.5 mm and is available on tape and reel. The operating voltage range is 1.06V to 1.17V, with a write cycle time of 18ns. This component is AEC-Q100 qualified and rated for an automotive operating temperature range of -40°C to 105°C. It is suitable for applications in the automotive industry.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case200-TFBGA
Mounting TypeSurface Mount
Memory Size16Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)
Voltage - Supply1.06V ~ 1.17V
TechnologySDRAM - Mobile LPDDR4X
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-TFBGA (10x14.5)
GradeAutomotive
Write Cycle Time - Word, Page18ns
Memory InterfaceParallel
Access Time3.5 ns
Memory Organization512M x 32
QualificationAEC-Q100

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