MT53E512M32D1ZW-046BAAT:B
IC DRAM 16GBIT 2.133GHZ 200WFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. presents the MT53E512M32D1ZW-046BAAT-B, a 16Gbit Mobile LPDDR4X SDRAM component. This high-performance memory IC operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. Its parallel memory interface and 512M x 32 organization facilitate efficient data handling. The component is housed in a 200-TFBGA package with dimensions of 10x14.5 mm. Designed for demanding applications, it features a wide operating temperature range of -40°C to 105°C (TC) and a supply voltage range of 1.06V to 1.17V. This device is AEC-Q100 qualified, making it suitable for automotive and other stringent industrial environments. The write cycle time for word/page operations is 18 ns.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 32 |
| Qualification | AEC-Q100 |
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