MT53E512M32D1ZW-046 AUT:B
IC DRAM 16GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc.'s MT53E512M32D1ZW-046-AUT-B is a 16Gbit Mobile LPDDR4X SDRAM memory component. This high-performance volatile memory features a parallel interface and operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. The memory organization is 512M x 32, and it is supplied in a 200-TFBGA (10x14.5) package, designed for surface mounting. The component supports a supply voltage range of 1.06V to 1.17V and a word/page write cycle time of 18ns. Qualified to AEC-Q100 standards, this memory is engineered for operation within an ambient temperature range of -40°C to 125°C (TC), making it suitable for demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 32 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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