MT53E512M32D1ZW-046 AAT:B TR
IC DRAM 16GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT53E512M32D1ZW-046-AAT-B-TR is a 16Gbit LPDDR4X SDRAM device with a parallel interface, operating at 2.133 GHz with an access time of 3.5 ns. This volatile memory component is organized as 512M x 32 and is supplied in a 200-TFBGA package (10x14.5 mm) on tape and reel. Featuring a supply voltage range of 1.06V to 1.17V and a write cycle time of 18ns, this device is qualified to AEC-Q100 standards and operates within an industrial temperature range of -40°C to 105°C. Applications include automotive systems and other demanding environments requiring high-performance memory solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 32 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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