MT53E512M32D1NP-046 WT:B
IC DRAM 16GBIT PAR 200WFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT53E512M32D1NP-046-WT-B is a 16Gbit Mobile LPDDR4X SDRAM component. This volatile memory device operates with a clock frequency of 2.133 GHz and features a 3.5 ns access time. The memory organization is 512M x 32. It utilizes a parallel interface and is housed in a 200-WFBGA package with dimensions of 10x14.5 mm. The supply voltage range for this surface mount component is 1.06V to 1.17V. With a write cycle time of 18 ns for word/page operations, it is suitable for demanding applications in the automotive, consumer electronics, and networking sectors. The operating temperature range is -25°C to 85°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 2 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Gbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Grade | - |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 32 |
| Programmable | Not Verified |
| Qualification | - |