MT53E512M16D1FW-046 AIT:D TR
IC DRAM 8GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT53E512M16D1FW-046-AIT-D-TR is an 8Gb LPDDR4X SDRAM memory component. This volatile memory features a parallel interface with a clock frequency of 2.133 GHz and an access time of 3.5 ns. The memory organization is 512M x 16, providing a total capacity of 8 Gigabits. Designed for surface mounting, it is supplied in a 200-TFBGA package with dimensions of 10x14.5 mm. This component operates within a supply voltage range of 1.06V to 1.17V and has a write cycle time of 18ns. Qualified to AEC-Q100 standards, it is rated for an operating temperature range of -40°C to 95°C (TC). The MT53E512M16D1FW-046-AIT-D-TR is suitable for automotive applications. It is provided in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 4 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
MT53E768M32D4DE-046 AAT:E
IC DRAM 24GBIT 200TFBGA
