MT53E512M16D1FW-046 AIT:D
IC DRAM 8GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT53E512M16D1FW-046-AIT-D is an 8Gbit Mobile LPDDR4X SDRAM device offering an 8.0-gigabit capacity. This component features a parallel interface and operates at a clock frequency of 2.133 GHz with an access time of 3.5 nanoseconds. The memory organization is 512M x 16, and it utilizes a 200-TFBGA (10x14.5) package for surface mounting. Designed for demanding applications, this memory IC operates within a voltage supply range of 1.06V to 1.17V and has a wide operating temperature range of -40°C to 95°C (TC). It is AEC-Q100 qualified, making it suitable for automotive applications. The write cycle time for word/page is 18ns.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 4 week(s)Product Status: Last Time BuyPackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 512M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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