MT53E2G64D8TN-046 AUT:C TR
IC DRAM 128GBIT PAR 556LFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT53E2G64D8TN-046-AUT-C-TR, a 128Gbit parallel SDRAM LPDDR4X memory device. This component operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. Featuring a 2G x 64 memory organization, it utilizes a 556-LFBGA package with dimensions of 12.4x12.4 mm for surface mounting. The device supports a supply voltage range of 1.06V to 1.17V and has a write cycle time of 18ns. Qualified to AEC-Q100 standards and rated for an operating temperature range of -40°C to 125°C (TC), this memory IC is designed for demanding automotive applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 556-LFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 128Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 556-LFBGA (12.4x12.4) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 2G x 64 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
