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MT53E2G32D4DE-046 AUT:C TR

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MT53E2G32D4DE-046 AUT:C TR

IC DRAM 64GBIT PAR 200TFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT53E2G32D4DE-046-AUT-C-TR is a 64Gbit volatile DRAM memory component utilizing LPDDR4X technology. This automotive-grade device operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. The memory interface is parallel, and the device offers a word/page write cycle time of 18 ns. Its organization is 2G x 32, and it is supplied in a 200-TFBGA package measuring 10x14.5 mm, suitable for surface mounting. The operating temperature range is -40°C to 125°C (TC), and it meets AEC-Q100 qualification standards. Power is supplied within a voltage range of 1.06V to 1.17V. This component is commonly found in automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case200-TFBGA
Mounting TypeSurface Mount
Memory Size64Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 125°C (TC)
Voltage - Supply1.06V ~ 1.17V
TechnologySDRAM - Mobile LPDDR4X
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-TFBGA (10x14.5)
GradeAutomotive
Write Cycle Time - Word, Page18ns
Memory InterfaceParallel
Access Time3.5 ns
Memory Organization2G x 32
ProgrammableNot Verified
QualificationAEC-Q100

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