Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT53E2G32D4DE-046 AUT:C

Banner
productimage

MT53E2G32D4DE-046 AUT:C

IC DRAM 64GBIT PAR 200TFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. presents the MT53E2G32D4DE-046-AUT-C, a 64Gbit LPDDR4X SDRAM memory component. This device offers a 2.133 GHz clock frequency with a 3.5 ns access time, organized as 2G x 32 bits for parallel interface operation. Encased in a 200-TFBGA package (10x14.5 mm), it supports a supply voltage range of 1.06V to 1.17V and operates within an automotive temperature range of -40°C to 125°C (TC). The MT53E2G32D4DE-046-AUT-C is AEC-Q100 qualified, making it suitable for demanding automotive applications, as well as consumer electronics and industrial systems. It features a word/page write cycle time of 18ns.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Box
Technical Details:
PackagingBox
Package / Case200-TFBGA
Mounting TypeSurface Mount
Memory Size64Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 125°C (TC)
Voltage - Supply1.06V ~ 1.17V
TechnologySDRAM - Mobile LPDDR4X
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-TFBGA (10x14.5)
GradeAutomotive
Write Cycle Time - Word, Page18ns
Memory InterfaceParallel
Access Time3.5 ns
Memory Organization2G x 32
ProgrammableNot Verified
QualificationAEC-Q100

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA