Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT53E2G32D4DE-046 AAT:A TR

Banner
productimage

MT53E2G32D4DE-046 AAT:A TR

IC DRAM 64GBIT PAR 200TFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. LPDDR4X DRAM, part number MT53E2G32D4DE-046-AAT-A-TR, offers a 64Gbit memory solution. This volatile memory component operates at a 2.133 GHz clock frequency with a 3.5 ns access time. The memory organization is 2G x 32, utilizing a parallel interface with a word/page write cycle time of 18 ns. Designed for surface mount installation, it features a 200-TFBGA (10x14.5) package and operates within a temperature range of -40°C to 105°C (TC). The supply voltage ranges from 1.06V to 1.17V. This component is AEC-Q100 qualified and suitable for automotive applications. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case200-TFBGA
Mounting TypeSurface Mount
Memory Size64Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)
Voltage - Supply1.06V ~ 1.17V
TechnologySDRAM - Mobile LPDDR4X
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-TFBGA (10x14.5)
GradeAutomotive
Write Cycle Time - Word, Page18ns
Memory InterfaceParallel
Access Time3.5 ns
Memory Organization2G x 32
ProgrammableNot Verified
QualificationAEC-Q100

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA

product image
MTFC256GASAONS-AIT

IC FLASH 2TBIT UFS2.1 153TFBGA