MT53E256M32D2FW-046 AIT:B TR
IC DRAM 8GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT53E256M32D2FW-046-AIT-B-TR is an 8Gbit LPDDR4X SDRAM memory component featuring a parallel interface. This device operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. The memory organization is 256M x 32 bits, and it is supplied in a 200-TFBGA (10x14.5) package, designed for surface mounting. This component is qualified to AEC-Q100, indicating its suitability for automotive applications. The operating temperature range is from -40°C to 95°C (TC), and it requires a supply voltage between 1.06V and 1.17V. The write cycle time for word/page is 18ns. This memory solution is commonly utilized in automotive infotainment systems, advanced driver-assistance systems (ADAS), and other demanding mobile applications requiring high-performance volatile memory. The device is provided in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 256M x 32 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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