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MT53E256M16D1FW-046 WT:B

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MT53E256M16D1FW-046 WT:B

IC DRAM 4GBIT PAR 200TFBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT53E256M16D1FW-046-WT-B is a 4Gbit Mobile LPDDR4X SDRAM with a parallel interface. This volatile memory component operates at a clock frequency of 2.133 GHz, offering an access time of 3.5 ns and a write cycle time of 18ns. The memory organization is 256M x 16, and it features a supply voltage range of 1.06V to 1.17V. Housed in a 200-TFBGA package (10x14.5mm) for surface mounting, this component is rated for an operating temperature range of -30°C to 85°C (TC). This device is suitable for demanding applications in the automotive, consumer electronics, and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: BoxDatasheet:
Technical Details:
PackagingBox
Package / Case200-TFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)
Voltage - Supply1.06V ~ 1.17V
TechnologySDRAM - Mobile LPDDR4X
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-TFBGA (10x14.5)
Write Cycle Time - Word, Page18ns
Memory InterfaceParallel
Access Time3.5 ns
Memory Organization256M x 16
ProgrammableNot Verified

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