MT53E256M16D1FW-046 AUT:B TR
IC DRAM 4GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
The Micron Technology Inc. MT53E256M16D1FW-046-AUT-B-TR is a 4Gbit LPDDR4X SDRAM memory component. This volatile memory features a parallel interface and operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. The memory organization is 256M x 16, and it is supplied in a 200-TFBGA package with dimensions of 10x14.5 mm. This device supports a supply voltage range of 1.06V to 1.17V and has a write cycle time of 18 ns. Qualified to AEC-Q100 standards and rated for an operating temperature range of -40°C to 125°C, this component is suitable for automotive applications. The MT53E256M16D1FW-046-AUT-B-TR is provided in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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