MT53E256M16D1FW-046 AUT:B
IC DRAM 4GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology's MT53E256M16D1FW-046-AUT-B is a 4Gbit LPDDR4X SDRAM memory integrated circuit. This component features a 256M x 16 memory organization, offering a substantial 4 Gigabit capacity. Operating at a clock frequency of 2.133 GHz, it provides an access time of 3.5 ns and a word/page write cycle time of 18 ns. Designed for demanding applications, this memory device supports a supply voltage range of 1.06V to 1.17V. It comes in a 200-TFBGA package (10x14.5mm) suitable for surface mounting. The MT53E256M16D1FW-046-AUT-B is qualified to AEC-Q100 and operates within an automotive temperature range of -40°C to 125°C (TC). This memory solution is integral to automotive infotainment, advanced driver-assistance systems (ADAS), and other high-performance embedded systems requiring reliable and fast volatile memory.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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