MT53E256M16D1FW-046 AAT:B TR
IC DRAM 4GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT53E256M16D1FW-046-AAT-B-TR is a 4Gbit LPDDR4X SDRAM memory component. This device features a 256M x 16 memory organization and operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns. The memory interface is parallel, and it supports a -40°C to 105°C operating temperature range. Supplied in a 200-TFBGA package (10x14.5 mm), this component is AEC-Q100 qualified, indicating suitability for automotive applications. The supply voltage ranges from 1.06V to 1.17V, and the write cycle time for a word/page is 18 ns. This volatile memory component is designed for surface mounting and is provided in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
MT54W2MH8JF-4
IC SRAM 18MBIT HSTL 165FBGA
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
EDF8164A3PF-JD-F-R TR
IC DRAM 8GBIT PARALLEL 933MHZ
