MT53E1G32D2FW-046 AUT:B
IC DRAM 32GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc.'s MT53E1G32D2FW-046-AUT-B is a 32Gbit LPDDR4X SDRAM, organized as 1G x 32, operating at 2.133 GHz with a 3.5 ns access time. This volatile memory component features a parallel interface and is housed in a 200-TFBGA package measuring 10x14.5 mm. Engineered for demanding applications, it operates within an automotive temperature range of -40°C to 125°C (TC) and meets AEC-Q100 qualification standards. The supply voltage ranges from 1.06V to 1.17V, with a word/page write cycle time of 18 ns. This device is suitable for automotive electronics and high-performance computing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 32Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 1G x 32 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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