MT53E1G32D2FW-046 AAT:C
IC DRAM 32GBIT PAR 200TFBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. presents the MT53E1G32D2FW-046-AAT-C, a 32Gbit Low Power DDR4X (LPDDR4X) SDRAM memory device. This component features a parallel interface and operates at a clock frequency of 2.133 GHz, providing an access time of 3.5 ns. The memory organization is 1G x 32, and it is housed in a 200-TFBGA package with dimensions of 10x14.5 mm. Designed for demanding applications, this device meets AEC-Q100 qualification and operates within an automotive temperature range of -40°C to 105°C. Key specifications include a supply voltage range of 1.06V to 1.17V and a word/page write cycle time of 18ns. This memory solution is suitable for automotive, consumer electronics, and high-performance computing systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 32Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | Parallel |
| Access Time | 3.5 ns |
| Memory Organization | 1G x 32 |
| Qualification | AEC-Q100 |
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