Micron Technology Inc. presents the MT53B512M64D4NJ-062-WT-ES-B-TR, a high-density DRAM component. This device offers a substantial 32 Gigabit capacity, organized as 512M x 64 bits. It operates at clock speeds up to 1.6 GHz, providing significant bandwidth for demanding applications. The component is housed in a 272-ball WFBGA (Wafer Fan-Out Ball Grid Array) package, designed for high-performance board integration. Manufactured by Micron Technology Inc., this memory solution is suitable for a range of applications, including networking infrastructure, high-performance computing, and advanced automotive systems that require robust and fast memory subsystems. The MT53B512M64D4NJ-062-WT-ES-B-TR is supplied in a Tape & Reel (TR) format.
Additional Information
Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tape & Reel (TR)