MT47R512M4EB-25E:C
IC DRAM 2GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47R512M4EB-25E-C is a 2Gbit volatile DRAM memory component. This DDR2 SDRAM device operates at a clock frequency of 400 MHz with an access time of 400 ps. The memory organization is 512M x 4, utilizing a parallel interface. Key electrical specifications include a supply voltage range of 1.55V to 1.9V and a word/page write cycle time of 15ns. The component is housed in a 60-FBGA (9x11.5) package, suitable for surface mount applications. This memory solution is prevalent in networking, telecommunications, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.55V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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