MT47R256M4CF-3:H
IC DRAM 1GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT47R256M4CF-3-H is a 1Gbit SDRAM DDR2 memory device featuring a parallel interface. This component operates at a clock frequency of 333 MHz with an access time of 450 ps. The memory organization is 256M x 4, utilizing a volatile DRAM technology. The device is housed in a 60-FBGA (8x10) package, suitable for surface mount applications. Operating voltage ranges from 1.55V to 1.9V, with a word/page write cycle time of 15ns. The operating temperature range is 0°C to 85°C (TC). This component is commonly found in industrial, telecommunications, and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.55V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 450 ps |
| Memory Organization | 256M x 4 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
NAND08GW3D2AN6E
IC FLASH 8GBIT PARALLEL 48TSOP
MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA
MT46V32M16BN-5B:C
IC DRAM 512MBIT PARALLEL 60FBGA
