MT47H512M8WTR-3:C
IC DRAM 4GBIT PARALLEL 63FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H512M8WTR-3-C is a 4 Gbit DDR2 SDRAM component. This volatile memory device utilizes a parallel interface and features a memory organization of 512M x 8. Operating at a clock frequency of 333 MHz, it offers an access time of 450 ps and a write cycle time of 15 ns. The component is supplied in a 63-FBGA (9x11.5) package, designed for surface mount applications and operates with a supply voltage range of 1.7V to 1.9V. The operating temperature range is 0°C to 85°C (TC). This memory solution is relevant for applications in the telecommunications and computing industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 63-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 450 ps |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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