Home

Products

Integrated Circuits (ICs)

Memory

Memory

MT47H512M8WTR-25E:C TR

Banner
productimage

MT47H512M8WTR-25E:C TR

IC DRAM 4GBIT PARALLEL 63FBGA

Manufacturer: Micron Technology Inc.

Categories: Memory

Quality Control: Learn More

Micron Technology Inc. MT47H512M8WTR-25E-C-TR is a 4Gbit SDRAM DDR2 memory IC. This component features a parallel interface and operates at a clock frequency of 400 MHz with an access time of 400 ps. The memory organization is 512M x 8, and it requires a supply voltage range of 1.7V to 1.9V. The write cycle time for word/page operations is 15ns. This surface-mount device is housed in a 63-FBGA (9x11.5) package and is supplied on a tape and reel. It is suitable for applications within the industrial and telecommunications sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case63-TFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)
Voltage - Supply1.7V ~ 1.9V
TechnologySDRAM - DDR2
Clock Frequency400 MHz
Memory FormatDRAM
Supplier Device Package63-FBGA (9x11.5)
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Access Time400 ps
Memory Organization512M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
NAND08GW3D2AN6E

IC FLASH 8GBIT PARALLEL 48TSOP

product image
MT46V32M16BN-5B:C

IC DRAM 512MBIT PARALLEL 60FBGA

product image
MT53E768M32D4DE-046 AAT:E

IC DRAM 24GBIT 200TFBGA