MT47H512M4THN-3:E TR
IC DRAM 2GBIT PARALLEL 63FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H512M4THN-3-E-TR is a 2Gbit volatile DRAM memory module. This component utilizes SDRAM DDR2 technology, offering a parallel interface with a clock frequency of 333 MHz. The memory organization is 512M x 4, featuring an access time of 450 ps. It operates with a supply voltage range of 1.7V to 1.9V and has a write cycle time of 15ns. The device is housed in a 63-FBGA (8x10) package, suitable for surface mounting. The operating temperature range is 0°C to 85°C (TC). This component is commonly employed in telecommunications, networking, and consumer electronics applications requiring high-speed data storage. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 63-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 450 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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