MT47H512M4THN-25E:M TR
IC DRAM 2GBIT PARALLEL 63FBGAManufacturer: Micron Technology Inc.
Categories: Memory
Quality Control: Learn More
Micron Technology Inc. MT47H512M4THN-25E-M-TR is a 2Gbit DDR2 SDRAM. This memory component operates at a clock frequency of 400 MHz with an access time of 400 ps. The parallel memory interface supports a memory organization of 512M x 4. Supplied in a 63-FBGA (8x10) package, this surface mount device requires a supply voltage ranging from 1.7V to 1.9V. The write cycle time for word and page operations is 15ns. This component is suitable for applications in the computing and consumer electronics industries. It is delivered in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 63-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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