MT47H512M4THN-25E:H
IC DRAM 2GBIT PARALLEL 63FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H512M4THN-25E-H, a 2Gbit DDR2 SDRAM device, offers parallel interface connectivity with a 400 MHz clock frequency and a 400 ps access time. This volatile memory component, organized as 512M x 4, operates within a voltage range of 1.7V to 1.9V and features a 15ns write cycle time. Encased in a 63-FBGA (8x10) surface-mount package, it is suitable for applications requiring high-speed data buffering in consumer electronics and industrial automation. The operating temperature range is 0°C to 85°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 63-FBGA (8x10) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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