MT47H512M4EB-3:C
IC DRAM 2GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H512M4EB-3-C is a 2Gbit SDRAM DDR2 memory IC. This volatile memory component features a parallel interface with a memory organization of 512M x 4. It operates at a clock frequency of 333 MHz and offers an access time of 450 ps. The device is housed in a 60-FBGA (9x11.5) surface mount package and requires a supply voltage between 1.7V and 1.9V. Key specifications include a write cycle time of 15ns for word/page operations. This component is utilized in diverse industries including automotive, communication infrastructure, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 333 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 450 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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