MT47H512M4EB-25E:C TR
IC DRAM 2GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H512M4EB-25E-C-TR is a 2Gbit SDRAM DDR2 memory component featuring a parallel interface. This surface-mount device operates at a 400 MHz clock frequency with an access time of 400 ps. The memory organization is 512M x 4, and it requires a supply voltage between 1.7V and 1.9V. The write cycle time for word/page operations is 15ns. This component is housed in a 60-FBGA (9x11.5) package and is supplied on tape and reel. Its specifications make it suitable for applications in computing, networking, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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