MT47H512M4EB-25E:C
IC DRAM 2GBIT PARALLEL 60FBGAManufacturer: Micron Technology Inc.
Categories: Memory
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Micron Technology Inc. MT47H512M4EB-25E-C is a 2Gbit DDR2 SDRAM component with a parallel interface. This high-speed memory solution operates at 400 MHz with an access time of 400 ps. The device features a memory organization of 512M x 4 and a voltage supply range of 1.7V to 1.9V. Packaged in a 60-FBGA (9x11.5) format, it is suitable for surface mount applications. Typical write cycle time for a word/page is 15ns. This component is widely utilized in telecommunications, consumer electronics, and industrial automation sectors requiring robust memory performance. The operating temperature range is 0°C to 85°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SDRAM - DDR2 |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-FBGA (9x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 400 ps |
| Memory Organization | 512M x 4 |
| Programmable | Not Verified |
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